| SI1965DH-T1-E3 | ||
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| Product description : Si1965DH Series Dual P-Channel 12 V 390 mOhms Surface Mount Power Mosfet-SOT-363 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
|---|---|
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Part Status | Active |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 390 mOhm @ 1A, 4.5V |
| Power - Max | 1.25W |
| Supplier Device Package | SC-70-6 (SOT-363) |
| Gate Charge (Qg) @ Vgs | 4.2nC @ 8V |
| Category | Discrete Semiconductor Products |
| FET Type | 2 P-Channel (Dual) |
| Family | Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 120pF @ 6V |
| ECCN | EAR99 |
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