| Packaging: | Bulk |
|---|---|
| Qg - Gate Charge: | 26 nC |
| Pd - Power Dissipation: | 15 W |
| Package / Case: | IPAK-3 |
| Configuration: | 1 P-Channel |
| Mounting Style: | Through Hole |
| Fall Time: | 75 ns |
| Forward Transconductance - Min: | 11 S |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 135 ns |
| Id - Continuous Drain Current: | - 12 A |
| Rise Time: | 37 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 47 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | - 2.6 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 10 ns |
| Manufacturer: | ON Semiconductor |
| Factory Pack Quantity: | 500 |
| Brand: | ON Semiconductor |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 60 V |
| Transistor Type: | 1 P-Channel |
| ECCN | EAR99 |
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