SCT2450KEC specifications -Ameya360 electronic components purchase network


SCT2450KEC

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Product description : Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W
SPQ：1
Datasheet : SCT2450KEC.pdf

Drain to Source Voltage (Vdss)	1200V (1.2kV)
Mounting Type	Through Hole
Package / Case	TO-247-3
Input Capacitance (Ciss) @ Vds	463pF @ 800V
Rds On (Max) @ Id, Vgs	585 mOhm @ 3A, 18V
Vgs(th) (Max) @ Id	4V @ 900µA
FET Feature	Silicon Carbide (SiC)
Operating Temperature	175°C (TJ)
Supplier Device Package	TO-247
FET Type	MOSFET N-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Power - Max	85W
Gate Charge (Qg) @ Vgs	27nC @ 18V

Datasheet： SCT2450KEC.pdf

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Stock code :	710339
Mfg name :	ROHM Semiconductor
MPN :	SCT2450KEC
Product description :	Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W

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