| SBCP56-10T1G | ||
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| 产品描述：
Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
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| Collector-Emitter Saturation Voltage: | 0.5 V |
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| Emitter- Base Voltage VEBO: | 5 V |
| Packaging: | Reel |
| DC Collector/Base Gain hfe Min: | 63 at 150 mA at 2 V |
| Series: | BCP56 |
| Minimum Operating Temperature: | - 65 C |
| Factory Pack Quantity: | 1000 |
| Brand: | ON Semiconductor |
| Package / Case: | SOT-223-4 |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Maximum DC Collector Current: | 1 A |
| DC Current Gain hFE Max: | 160 at 150 mA at 2 V |
| Collector- Base Voltage VCBO: | 100 V |
| Manufacturer: | ON Semiconductor |
| Pd - Power Dissipation: | 1.5 W |
| Transistor Polarity: | NPN |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | Bipolar Transistors - BJT |
| Gain Bandwidth Product fT: | 130 MHz |
| Unit Weight: | 0.006632 oz |
| Maximum Operating Temperature: | + 150 C |
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