RTQ045N03TR
  • 1 (Unlimited)
  • NRND
  • SOT-23-6 Thin, TSOT-23-6
  • EAR99
Product description : N-Channel 1.25 W 30 V 60 mOhm Surface Mount 2.5 V Drive MosFet - TSMT-6
SPQ:3000
Datasheet :
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Packaging: Reel
Product: MOSFET Small Signal
Minimum Operating Temperature: - 55 C
Technology: Si
Height: 0.85 mm
Vgs - Gate-Source Voltage: 12 V
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 13 ns
Manufacturer: ROHM Semiconductor
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 45 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 30 V
Type: MOSFET
Maximum Operating Temperature: + 150 C
Operating Temperature 150°C (TJ)
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 10.7nC @ 4.5V
Supplier Device Package TSMT6 (SC-95)
Power Dissipation (Max) 1.25W (Ta)
Packaging Cut Tape (CT)
Vgs (Max) 12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
RoHS Lead free / RoHS Compliant
Width: 1.6 mm
Rds On - Drain-Source Resistance: 420 mOhms
Pd - Power Dissipation: 1.25 W
Package / Case: TSMT-6
Configuration: Single Quad Drain
Mounting Style: SMD/SMT
Fall Time: 31 ns
Length: 2.9 mm
Series: RTQ045N03
Factory Pack Quantity: 3000
Brand: ROHM Semiconductor
RoHS:  Details
Id - Continuous Drain Current: 4.5 A
Rise Time: 31 ns
Transistor Type: 1 N-Channel
ECCN EAR99
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 43 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Drain to Source Voltage (Vdss) 30V
Package / Case SOT-23-6 Thin, TSOT-23-6
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Lead Free Status / RoHS Status 1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Datasheet:
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