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| 产品描述：
P-Channel 30 V 630 mOhm 0.8 W Surface Mount 4 V Drive MosFet - TUMT-3
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| 标准包装：3000 | ||
| 数据手册： |
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| Package / Case | 3-SMD, Flat Leads |
|---|---|
| Power - Max | 800mW |
| Supplier Device Package | TUMT3 |
| Gate Charge (Qg) @ Vgs | 1.9nC @ 5V |
| Category | Discrete Semiconductor Products |
| FET Type | P-Channel |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 120pF @ 10V |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single |
| Power Dissipation (Max) | 800mW (Ta) |
| Lead Free Status / RoHS Status | 1 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On (Max) @ Id, Vgs | 350 mOhm @ 1A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Part Status | Not For New Designs |
| Manufacturer | Rohm Semiconductor |
| Family | Transistors - FETs, MOSFETs - Single |
| Operating Temperature | 150°C (TJ) |
| ECCN | EAR99 |
| Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 10V |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| 数据手册： |
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