RS1G120MNTB
  • 1 (Unlimited)
  • ACTIVE
  • 8-PowerTDFN
Product description : MOSFET N-CH 40V 12A 8HSOP
SPQ:1
Datasheet :
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FET 类型 MOSFET N 通道,金属氧化物
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Rds On (Max) @ Id, Vgs 16.2 mOhm @ 12A, 10V
Gate Charge (Qg) @ Vgs 9.4nC @ 10V
Power - Max 3W
Mounting Type Surface Mount
Supplier Device Package 8-HSOP
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 20V
Mounting Type Surface Mount
Vgs(th) (Max) @ Id 2.5V @ 1mA
Drain to Source Voltage (Vdss) 40V
Package / Case 8-PowerTDFN
Manufacturer Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET 功能 标准
FET Feature Standard
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) @ Vds 570pF @ 20V
Operating Temperature 150°C (TJ)
Package / Case 8-PowerTDFN
Operating Temperature 150°C (TJ)
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 10V
Rds On (Max) @ Id, Vgs 16.2 mOhm @ 12A, 10V
Supplier Device Package 8-HSOP
Power Dissipation (Max) 3W (Ta), 25W (Tc)
Technology MOSFET (Metal Oxide)
Part Status Active
Vgs (Max) ±20V
Lead Free Status / RoHS Status 1
RoHS Lead free / RoHS Compliant
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