RS1E130GNTB
  • 1 (Unlimited)
  • 量产中
  • 8-HSOP
产品描述:
MOSFET N-CH 30V 13A 8-HSOP
标准包装:2500
数据手册:
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Rds On (Max) @ Id, Vgs 11.7 mOhm @ 13A, 10V
Power - Max 3W
Supplier Device Package 8-HSOP
Gate Charge (Qg) @ Vgs 7.9nC @ 10V
Category Discrete Semiconductor Products
FET Type N-Channel
Vgs(th) (Max) @ Id 2.5V @ 1mA
Operating Temperature 150°C (TJ)
Packaging Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 15V
Power Dissipation (Max) 3W (Ta), 22.2W (Tc)
Lead Free Status / RoHS Status 1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Package / Case 8-PowerTDFN
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A (Ta)
Part Status Active
Manufacturer Rohm Semiconductor
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 420pF @ 15V
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 10V
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
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