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| 产品描述：
http://www.ameya360.com/product/6940458
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
- 产品特性
- 技术文档
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| RoHS | Lead free / RoHS Compliant |
|---|---|
| Manufacturer | ROHM Semiconductor |
| Technology | SiC |
| Package / Case | TO-247-4 |
| Transistor Polarity | N-Channel |
| Id - Continuous Drain Current | 39 A |
| Vgs th - Gate-Source Threshold Voltage | 5.6 V |
| Qg - Gate Charge | 58 nC |
| Maximum Operating Temperature | + 175 C |
| Configuration | Single |
| Packaging | Tube |
| Transistor Type | 1 N-Channel |
| Fall Time | 13 ns |
| Rise Time | 14 ns |
| Typical Turn-Off Delay Time | 17 ns |
| ECCN | EAR99 |
| Product Category | MOSFET |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Rds On - Drain-Source Resistance | 78 mOhms |
| Vgs - Gate-Source Voltage | - 4 V to 22 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 165 W |
| Channel Mode | Enhancement |
| Series | SCT3x |
| Forward Transconductance - Min | 4.9 S |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Typical Turn-On Delay Time | 5 ns |
| 数据手册： |
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