RF4C050APTR
  • 1 (Unlimited)
  • ACTIVE
  • 8-PowerUDFN
Product description : MOSFET P-CH 20V 10A 8HUML
SPQ:3000
Datasheet :
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FET 类型 MOSFET P 通道,金属氧化物
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Rds On (Max) @ Id, Vgs 26 mOhm @ 5A, 4.5V
Gate Charge (Qg) @ Vgs 55nC @ 4.5V
Power - Max 2W
Mounting Type Surface Mount
Supplier Device Package 6-HUML2020L8 (2x2)
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 10V
Mounting Type Surface Mount
Vgs(th) (Max) @ Id 1V @ 1mA
Drain to Source Voltage (Vdss) 20V
Package / Case 8-PowerUDFN
Manufacturer Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET 功能 标准
FET Feature Standard
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) @ Vds 5500pF @ 10V
Operating Temperature 150°C (TJ)
Package / Case 8-PowerUDFN
Operating Temperature 150°C (TJ)
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 55nC @ 4.5V
Rds On (Max) @ Id, Vgs 26 mOhm @ 5A, 4.5V
Supplier Device Package HUML2020L8
Power Dissipation (Max) 2W (Ta)
Technology MOSFET (Metal Oxide)
Part Status Active
Vgs (Max) -8V
Lead Free Status / RoHS Status 1
RoHS Lead free / RoHS Compliant
Datasheet:
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