| R6009ENJTL | ||
|---|---|---|
|
||
|
||
| 产品描述：
MOSFET N-CH 600V 9A LPT
|
||
| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
|
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Operating Temperature | 150°C (TJ) |
|---|---|
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 430pF @ 25V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Drain to Source Voltage (Vdss) | 600V |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Lead Free Status / RoHS Status | 1 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 535 mOhm @ 2.8A, 10V |
| Supplier Device Package | LPTS (D2PAK) |
| Power Dissipation (Max) | 40W (Tc) |
| Packaging | Cut Tape (CT) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
登录之后就可发表评论
