EMB75T2R specifications -Ameya360 electronic components purchase network


EMB75T2R
1 (Unlimited)
ACTIVE SOT-563, SOT-666
Product description : TRANS 2PNP PREBIAS 0.15W EMT6
SPQ：1
Datasheet : EMB75T2R(CN).pdf EMB75T2R(EN).pdf EMB75T2R(JP).pdf

Frequency - Transition	250MHz
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Supplier Device Package	EMT6
Package / Case	SOT-563, SOT-666
Part Status	Active
Current - Collector Cutoff (Max)	500nA
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Categories	Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Resistor - Base (R1)	4.7 kOhms
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 5mA
Transistor Type	2 PNP - Pre-Biased (Dual)
Power - Max	150mW
Manufacturer	Rohm Semiconductor
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V

Datasheet： EMB75T2R(CN).pdf EMB75T2R(EN).pdf EMB75T2R(JP).pdf

You can comment after logging in.

Please inform us of the error for improving our site and products.

Type of Error

	Product description/Specifications
	Image
	Data sheet
	Search
	Associated/Alternative Product
	Prices
	Other

Explanation (Character Limit: 500)

Name:

Email(We may contact you about this problem.)

placeholder

PART	Quantity*	Target Price
	Quantity MOQ:	Target Price $ If not sure, you may skip this
remark

placeholder

PART	Quantity*	Target Price	Expected LeadTime
	Quantity	Target Price $ If not sure, you may skip this	Expected LeadTime If not sure, you may skip this
remark

Please enter the verification code in the image below：