| ECH8660-TL-H | ||
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| 产品描述：
MOSFET N/P-CH 30V 4.5A ECH8
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| 标准包装：3000 | ||
| 数据手册： | ||
| ECAD模型:
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| Minimum Operating Temperature: | - 55 C |
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| Rds On - Drain-Source Resistance: | 110 mOhms, 82 mOhms |
| Pd - Power Dissipation: | 1.3 W |
| Package / Case: | ECH-8 |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 6.2 ns, 7.5 ns |
| Series: | ECH8660 |
| Factory Pack Quantity: | 3000 |
| Typical Turn-Off Delay Time: | 17 ns, 45 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| ECCN | EAR99 |
| Qg - Gate Charge: | 4.4 nC, 10 nC |
| Packaging: | Reel |
| Technology: | Si |
| Configuration: | Dual Quad Drain |
| Mounting Style: | SMD/SMT |
| Fall Time: | 7.5 ns, 35 ns |
| Manufacturer: | ON Semiconductor |
| Transistor Polarity: | N-Channel, P-Channel |
| Brand: | ON Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 4.5 A |
| Rise Time: | 11 ns, 26 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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