| QSE114 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
QSE114 Series 30 V 880 nm Through Hole Plastic Silicon Infrared Phototransistor
|
||
| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Width: | 2.54 mm |
|---|---|
| Fall Time: | 8 us |
| Length: | 4.44 mm |
| Peak Wavelength: | 880 nm |
| Pd - Power Dissipation: | 100 mW |
| Factory Pack Quantity: | 500 |
| Brand: | Fairchild Semiconductor |
| Half Intensity Angle Degrees: | 25 deg |
| Product Category: | Phototransistors |
| Height: | 5.08 mm |
| Rise Time: | 8 us |
| Type: | Photo Transistor |
| ECCN | EAR99 |
| Lens Color/Style: | Black Transparent |
| Packaging: | Bulk |
| Manufacturer: | Fairchild Semiconductor |
| Operating Supply Voltage: | 5 V |
| Minimum Operating Temperature: | - 40 C |
| Part # Aliases: | QSE114_NL |
| RoHS: | Details |
| Package / Case: | Side Looker |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Dark Current: | 100 nA |
| Unit Weight: | 0.004762 oz |
| Maximum Operating Temperature: | + 100 C |
| 数据手册： |
|---|
登录之后就可发表评论
请输入下方图片中的验证码：