QSB363ZR specifications -Ameya360 electronic components purchase network


QSB363ZR

ACTIVE EAR99
Product description : QSB363 Series 30 V 940 nm Subminiature Plastic Silicon Infrared Phototransistor
SPQ：1000
Datasheet : QSB363ZR.pdf

Width:	2.2 mm
Fall Time:	15 us
Length:	2.7 mm
Peak Wavelength:	940 nm
Pd - Power Dissipation:	75 mW
Factory Pack Quantity:	1000
RoHS:	Details
Package / Case:	T-3/4
Collector- Emitter Voltage VCEO Max:	30 V
Dark Current:	100 nA
Unit Weight:	0.003175 oz
Maximum Operating Temperature:	+ 85 C
Lens Color/Style:	Black Transparent
Packaging:	Reel
Manufacturer:	Fairchild Semiconductor
Operating Supply Voltage:	5 V
Minimum Operating Temperature:	- 25 C
Brand:	Fairchild Semiconductor
Half Intensity Angle Degrees:	12 deg
Product Category:	Phototransistors
Height:	3 mm
Rise Time:	15 us
Type:	Photo Transistor
ECCN	EAR99

Datasheet： QSB363ZR.pdf

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Stock code :	682492
Mfg name :	onsemi
MPN :	QSB363ZR
Product description :	QSB363 Series 30 V 940 nm Subminiature Plastic Silicon Infrared Phototransistor

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