| QSB363 | ||
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| 产品描述：
QSB363 Series 30 V 940 nm Subminiature Plastic Silicon Infrared Phototransistor
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| 标准包装：1000 | ||
| 数据手册： |
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| Lens Color/Style: | Black |
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| Product: | Phototransistors |
| Packaging: | Bulk |
| Collector-Emitter Breakdown Voltage: | 30 V |
| Pd - Power Dissipation: | 75 mW |
| Package / Case: | T-3/4 |
| Unit Weight: | 0.003175 oz |
| Fall Time: | 15 us |
| Manufacturer: | Fairchild Semiconductor |
| Factory Pack Quantity: | 1000 |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Rise Time: | 15 us |
| Maximum Operating Temperature: | + 85 C |
| Collector-Emitter Saturation Voltage: | 0.4 V |
| Width: | 2.2 mm |
| Maximum On-State Collector Current: | 1.5 mA |
| Minimum Operating Temperature: | - 40 C |
| Half Intensity Angle Degrees: | 24 deg |
| Height: | 3 mm |
| Mounting Style: | SMD/SMT |
| Length: | 2.7 mm |
| Peak Wavelength: | 940 nm |
| Brand: | Fairchild Semiconductor |
| Product Category: | Phototransistors |
| Dark Current: | 100 nA |
| Wavelength: | 940 nm |
| ECCN | EAR99 |
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