QS8J2TR
  • 1 (Unlimited)
  • ACTIVE
  • 8-SMD, Flat Lead
Product description : MOSFET 2P-CH 12V 4A TSMT8
SPQ:3000
Datasheet :
ECAD Model:
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Package / Case: TSMT-8
Vgs - Gate-Source Voltage: 10 V
Number of Channels: 2 Channel
Typical Turn-On Delay Time: 10 ns
Manufacturer: ROHM Semiconductor
Transistor Polarity: P-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 300 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: - 12 V
Transistor Type: 2 P-Channel
Operating Temperature 150°C (TJ)
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 36 mOhm @ 4A, 4.5V
Supplier Device Package TSMT8
Package / Case 8-SMD, Flat Lead
Current - Continuous Drain (Id) @ 25°C 4A
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration: Dual
Mounting Style: SMD/SMT
Fall Time: 180 ns
Forward Transconductance - Min: 5.5 S
Series: QS8J2
Factory Pack Quantity: 3000
Brand: ROHM Semiconductor
RoHS:  Details
Id - Continuous Drain Current: 4 A
Rise Time: 60 ns
Maximum Operating Temperature: + 150 C
FET Feature Logic Level Gate, 1.5V Drive
FET Type 2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 1940pF @ 6V
Vgs(th) (Max) @ Id 1V @ 1mA
Drain to Source Voltage (Vdss) 12V
Power - Max 550mW
Lead Free Status / RoHS Status 1
Datasheet:
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