| QS8J2TR | ||
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| 产品描述：
MOSFET 2P-CH 12V 4A TSMT8
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| 标准包装：3000 | ||
| 数据手册： | ||
| ECAD模型:
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| Package / Case: | TSMT-8 |
|---|---|
| Vgs - Gate-Source Voltage: | 10 V |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 10 ns |
| Manufacturer: | ROHM Semiconductor |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 300 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 12 V |
| Transistor Type: | 2 P-Channel |
| Operating Temperature | 150°C (TJ) |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 36 mOhm @ 4A, 4.5V |
| Supplier Device Package | TSMT8 |
| Package / Case | 8-SMD, Flat Lead |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Fall Time: | 180 ns |
| Forward Transconductance - Min: | 5.5 S |
| Series: | QS8J2 |
| Factory Pack Quantity: | 3000 |
| Brand: | ROHM Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 4 A |
| Rise Time: | 60 ns |
| Maximum Operating Temperature: | + 150 C |
| FET Feature | Logic Level Gate, 1.5V Drive |
| FET Type | 2 P-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 1940pF @ 6V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Drain to Source Voltage (Vdss) | 12V |
| Power - Max | 550mW |
| Lead Free Status / RoHS Status | 1 |
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