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| 产品描述：
QS6M3 Series Dual N/ P-Channel 30 V/20 V 1.25 W 360 mOhm Drive MosFet SMT-TSMT-6
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| Online Catalog | N and P-Channel Logic Level Gate FETs |
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| Product Training Modules | MOSFETs |
| PCN Design/Specification | TSMT Package Updates 24/Dec/2014 |
| Operating Temperature | 150°C (TJ) |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 230 mOhm @ 1.5A, 4.5V |
| Supplier Device Package | TSMT6 (SC-95) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Current - Continuous Drain (Id) @ 25°C | 1.5A |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Datasheets | QS6M3 |
| Featured Product | MOSFET ECOMOS |
| ECCN | EAR99 |
| FET Feature | Logic Level Gate |
| FET Type | N and P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Drain to Source Voltage (Vdss) | 30V, 20V |
| Power - Max | 1.25W |
| Lead Free Status / RoHS Status | 1 |
| Base Part Number | *M3 |
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