BSM080D12P2C008
  • 1 (Unlimited)
  • NEW
  • EAR99
Product description : Discrete Semiconductor Modules Half Bridge Module SiC DMOS & SBD 1200V
SPQ:12
Datasheet :
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Vgs th - Gate-Source Threshold Voltage 1.6 V
Number of Channels 2 Channel
Configuration Half-Bridge
Minimum Operating Temperature - 40 C
Type SiC Power Module
Product Power Semiconductor Modules
MSL 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage 1200 V
Pd - Power Dissipation 600 W
Maximum Operating Temperature + 150 C
Mounting Style Screw
Vgs - Gate-Source Voltage - 6 V, + 22 V
Id - Continuous Drain Current 80 A
ECCN EAR99
Datasheet:
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