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| 产品描述：
Single P-Channel 55 V 0.175 Ohm 19 nC HEXFET® Power Mosfet - TO-252-3
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| 标准包装：3000 | ||
| 数据手册： |
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| Power - Max | 38W |
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| Rds On (Max) @ Id, Vgs | 175 mOhm @ 6.6A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Digi-Reel® |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| FET Feature | Standard |
| Supplier Device Package | D-Pak |
| Gate Charge (Qg) @ Vgs | 19nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 350pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
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