RS1E350BNTB specifications -Ameya360 electronic components purchase network


RS1E350BNTB
1 (Unlimited)
ACTIVE 8-PowerTDFN
Product description : MOSFET N-CH 30V 35A 8HSOP
SPQ：2500
Datasheet : RS1E350BNTB.pdf

Operating Temperature	150°C (TJ)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7900pF @ 15V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	30V
Package / Case	8-PowerTDFN
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
RoHS	Lead free / RoHS Compliant
Categories	Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.7 mOhm @ 35A, 10V
Supplier Device Package	8-HSOP
Power Dissipation (Max)	35W (Tc)
Current - Continuous Drain (Id) @ 25°C	35A (Ta)
Lead Free Status / RoHS Status	1
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Datasheet： RS1E350BNTB.pdf

You can comment after logging in.

Please inform us of the error for improving our site and products.

Type of Error

	Product description/Specifications
	Image
	Data sheet
	Search
	Associated/Alternative Product
	Prices
	Other

Explanation (Character Limit: 500)

Name:

Email(We may contact you about this problem.)

placeholder

PART	Quantity*	Target Price
	Quantity MOQ:	Target Price $ If not sure, you may skip this
remark

placeholder

PART	Quantity*	Target Price	Expected LeadTime
	Quantity	Target Price $ If not sure, you may skip this	Expected LeadTime If not sure, you may skip this
remark

Please enter the verification code in the image below：