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| 产品描述：
FETs Single
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| 标准包装：360 | ||
| 数据手册： | ||
| ECAD模型:
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| Categories | Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single |
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| Series | - |
| Part Status | Active |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 900µA |
| Input Capacitance (Ciss) (Max) @ Vds | 463pF @ 800V |
| FET Feature | - |
| Rds On (Max) @ Id, Vgs | 585 mOhm @ 3A, 18V |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Manufacturer | Rohm Semiconductor |
| Packaging | Tube |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 18V |
| Vgs (Max) | +22V, -6V |
| Power Dissipation (Max) | 85W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Supplier Device Package | TO-247 |
| 数据手册： |
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