| Rds On - Drain-Source Resistance: | 163 mOhms |
|---|---|
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Vgs - Gate-Source Voltage: | +/- 25 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 13.4 ns |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 55.6 ns |
| Product Category: | MOSFET |
| Rise Time: | 8.1 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | ECL99 |
| Qg - Gate Charge: | 33 nC |
| Pd - Power Dissipation: | 30 W |
| Package / Case: | TO-220FP-3 |
| Configuration: | 1 N-Channel |
| Mounting Style: | Through Hole |
| Fall Time: | 6.3 ns |
| Manufacturer: | STMicroelectronics |
| Factory Pack Quantity: | 50 |
| Brand: | STMicroelectronics |
| RoHS: | Details |
| Id - Continuous Drain Current: | 20 A |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Maximum Operating Temperature: | + 150 C |
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