| IPG20N06S4L11ATMA1 | ||
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| Product description : IPG20N06S4L Series 60 V 11.2 mOhm OptiMOS™-T2 Power-Transistor - PG-TDSON-8-4 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | 8-PowerVDFN |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Vgs(th) (Max) @ Id | 2.2V @ 28µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 11.2 mOhm @ 17A, 10V |
| Power - Max | 65W |
| Supplier Device Package | PG-TDSON-8-4 (5.15x6.15) |
| Gate Charge (Qg) @ Vgs | 53nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | 2 N-Channel (Dual) |
| Family | Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 4020pF @ 25V |
| ECCN | EAR99 |
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