Product: | Power MOSFET |
---|---|
Rds On - Drain-Source Resistance: | 900 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Vgs th - Gate-Source Threshold Voltage: | 3 V to 5 V |
Vgs - Gate-Source Voltage: | +/- 30 V |
Mounting Style: | Through Hole |
Fall Time: | 26 ns |
Length: | 20.15 mm |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 134 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 1200 V |
Type: | MDmesh K5 |
ECCN | ECL99 |
Width: | 15.75 mm |
Qg - Gate Charge: | 89 nC |
Pd - Power Dissipation: | 446 W |
Package / Case: | TO-247-3 |
Height: | 5.15 mm |
Unit Weight: | 1.340411 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 34 ns |
Manufacturer: | STMicroelectronics |
Factory Pack Quantity: | 30 |
Brand: | STMicroelectronics |
RoHS: | Details |
Id - Continuous Drain Current: | 14 A |
Rise Time: | 14 ns |
Maximum Operating Temperature: | + 150 C |