| IRF60R217 | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
Single N-Channel 60 V 9.9 mOhm 40 nC HEXFET® Power Mosfet - DPAK
|
||
| 标准包装：1 | ||
| 数据手册： -- | ||
| ECAD模型:
|
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| FET Feature | Standard |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | StrongIRFET™ |
| Vgs(th) (Max) @ Id | 3.7V @ 50µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs | 9.9 mOhm @ 35A, 10V |
| Power - Max | 83W |
| Supplier Device Package | D-Pak |
| Gate Charge (Qg) @ Vgs | 66nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 2170pF @ 25V |
| ECCN | EAR99 |
登录之后就可发表评论
