IRF60R217 | ||
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产品描述:
Single N-Channel 60 V 9.9 mOhm 40 nC HEXFET® Power Mosfet - DPAK
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标准包装:1 | ||
数据手册: -- |
FET Feature | Standard |
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Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
Part Status | Active |
Manufacturer | Infineon Technologies |
Series | StrongIRFET™ |
Vgs(th) (Max) @ Id | 3.7V @ 50µA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Packaging | Cut Tape (CT) |
Rds On (Max) @ Id, Vgs | 9.9 mOhm @ 35A, 10V |
Power - Max | 83W |
Supplier Device Package | D-Pak |
Gate Charge (Qg) @ Vgs | 66nC @ 10V |
Category | Discrete Semiconductor Products |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | Transistors - FETs, MOSFETs - Single |
Mounting Type | Through Hole |
Input Capacitance (Ciss) @ Vds | 2170pF @ 25V |
ECCN | EAR99 |
Supplier Stock
Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them
stock | 2000 | Update On 2025-05-27 |
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Lead-Time | -- | |
SPQ/MOQ | 1/1 | |
Location | -- | |
DateCode | -- |
Supplier Code:SP1027
Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them
stock | 4000 | Update On 2022-12-01 |
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Lead-Time | 0Weeks | |
Supplier SPQ/MOQ | 1/2000 | |
Location | -- | |
DateCode | 2225 |
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