IRF60R217
IRF60R217
  • 量产中
  • D-Pak
  • EAR99
产品描述:
Single N-Channel 60 V 9.9 mOhm 40 nC HEXFET® Power Mosfet - DPAK
标准包装:1
数据手册: --
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
FET Feature Standard
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Part Status Active
Manufacturer Infineon Technologies
Series StrongIRFET™
Vgs(th) (Max) @ Id 3.7V @ 50µA
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Cut Tape (CT)
Rds On (Max) @ Id, Vgs 9.9 mOhm @ 35A, 10V
Power - Max 83W
Supplier Device Package D-Pak
Gate Charge (Qg) @ Vgs 66nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Through Hole
Input Capacitance (Ciss) @ Vds 2170pF @ 25V
ECCN EAR99
登录之后就可发表评论

Supplier Stock

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

stock2000Update On
2025-05-27
Lead-Time--
SPQ/MOQ1/1
Location--
DateCode--

Supplier Code:SP1027

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

$0.81143

6.73945

stock4000Update On
2022-12-01
Lead-Time0Weeks
Supplier SPQ/MOQ1/2000
Location--
DateCode2225

请输入下方图片中的验证码:

验证码