| IKW40N60DTPXKSA1 | ||
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| 产品描述：
Transistor: IGBT; 600V; 48A; 123W; TO247-3
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| 标准包装：240 | ||
| 数据手册： -- | ||
| ECAD模型:
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- 规格参数
- 产品特性
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| Collector-Emitter Saturation Voltage: | 1.6 V |
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| Manufacturer: | Infineon |
| Continuous Collector Current at 25 C: | 67 A |
| Factory Pack Quantity: | 240 |
| Brand: | Infineon Technologies |
| Package / Case: | TO-247-3 |
| Product Category: | IGBT Transistors |
| Configuration: | Single |
| Maximum Gate Emitter Voltage: | +/- 20 V |
| Packaging: | Tube |
| Pd - Power Dissipation: | 246 W |
| Minimum Operating Temperature: | - 40 C |
| Part # Aliases: | 1.3396 IKW40N60DTP |
| RoHS: | Details |
| Gate-Emitter Leakage Current: | 100 nA |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Mounting Style: | Through Hole |
| Maximum Operating Temperature: | + 175 C |
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