| NDD02N60Z-1G | ||
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| 产品描述：
MOSFET N-CH 600V IPAK
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| 标准包装：1 | ||
| 数据手册： |
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| Rds On - Drain-Source Resistance: | 4 Ohms |
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| Packaging: | Tube |
| Qg - Gate Charge: | 10.1 nC |
| Pd - Power Dissipation: | 57 W |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
| Configuration: | Single |
| Unit Weight: | 0.139332 oz |
| Mounting Style: | Through Hole |
| Forward Transconductance - Min: | 1.7 S |
| Number of Channels: | 1 Channel |
| Manufacturer: | ON Semiconductor |
| Minimum Operating Temperature: | - 55 C |
| Factory Pack Quantity: | 75 |
| Brand: | ON Semiconductor |
| Package / Case: | TO-247-3 |
| Id - Continuous Drain Current: | 1.4 A |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | 30 V |
| Transistor Type: | 1 N-Channel |
| Maximum Operating Temperature: | + 125 C |
| 数据手册： |
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