RV2C014BCT2CL
  • 1 (Unlimited)
  • 量产中
  • 3-XFDFN
  • EAR99
产品描述:
RV2C014BC Series -20 V 300 mOhm P-Channel Small Signal Mosfet - DFN1006
标准包装:8000
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Product: MOSFETs
Rds On - Drain-Source Resistance: 700 mOhms
Pd - Power Dissipation: 600 mW
Vgs th - Gate-Source Threshold Voltage: - 1 V
Vgs - Gate-Source Voltage: +/- 8 V
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 3.1 ns
Manufacturer: ROHM Semiconductor
Transistor Polarity: P-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 23 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: - 20 V
Transistor Type: 1 P-Channel
Maximum Operating Temperature: + 150 C
Operating Temperature 150°C (TJ)
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 10V
Supplier Device Package DFN1006-3
Power Dissipation (Max) 400mW (Ta)
Technology MOSFET (Metal Oxide)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
RoHS Lead free / RoHS Compliant
Packaging: Reel
Minimum Operating Temperature: - 55 C
Package / Case: DFN1006-3
Configuration: 1 P-Channel
Mounting Style: SMD/SMT
Fall Time: 3.1 ns
Forward Transconductance - Min: 0.3 S
Series: RVxC
Factory Pack Quantity: 8000
Brand: ROHM Semiconductor
RoHS:  Details
Id - Continuous Drain Current: - 1.4 A
Rise Time: 12 ns
Type: Small Signal MOSFET
ECCN EAR99
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs 300 mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 100µA
Drain to Source Voltage (Vdss) 20V
Package / Case 3-XFDFN
Current - Continuous Drain (Id) @ 25°C 700mA (Ta)
Lead Free Status / RoHS Status 1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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