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| 产品描述：
RV2C014BC Series -20 V 300 mOhm P-Channel Small Signal Mosfet - DFN1006
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| 标准包装：8000 | ||
| 数据手册： | ||
| ECAD模型:
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| Product: | MOSFETs |
|---|---|
| Rds On - Drain-Source Resistance: | 700 mOhms |
| Pd - Power Dissipation: | 600 mW |
| Vgs th - Gate-Source Threshold Voltage: | - 1 V |
| Vgs - Gate-Source Voltage: | +/- 8 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 3.1 ns |
| Manufacturer: | ROHM Semiconductor |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 23 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 20 V |
| Transistor Type: | 1 P-Channel |
| Maximum Operating Temperature: | + 150 C |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 10V |
| Supplier Device Package | DFN1006-3 |
| Power Dissipation (Max) | 400mW (Ta) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| RoHS | Lead free / RoHS Compliant |
| Packaging: | Reel |
| Minimum Operating Temperature: | - 55 C |
| Package / Case: | DFN1006-3 |
| Configuration: | 1 P-Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 3.1 ns |
| Forward Transconductance - Min: | 0.3 S |
| Series: | RVxC |
| Factory Pack Quantity: | 8000 |
| Brand: | ROHM Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 1.4 A |
| Rise Time: | 12 ns |
| Type: | Small Signal MOSFET |
| ECCN | EAR99 |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 1.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Drain to Source Voltage (Vdss) | 20V |
| Package / Case | 3-XFDFN |
| Current - Continuous Drain (Id) @ 25°C | 700mA (Ta) |
| Lead Free Status / RoHS Status | 1 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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