| RUS100N02TB | ||
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| 产品描述：
MOSFET N-CH 20V 10A 8SOP
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| 标准包装：2500 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
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| Rds On (Max) @ Id, Vgs | 12 mOhm @ 10A, 4.5V |
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| Power - Max | 2W |
| Supplier Device Package | 8-SOP |
| Gate Charge (Qg) @ Vgs | 24nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | N-Channel |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Operating Temperature | 150°C (TJ) |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 4.5V |
| Vgs (Max) | ±10V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| RoHS | Lead free / RoHS Compliant |
| Package / Case | 8-SOIC (0.154\", 3.90mm Width) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Part Status | Active |
| Manufacturer | Rohm Semiconductor |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 2250pF @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 10V |
| Power Dissipation (Max) | 2W (Ta) |
| Lead Free Status / RoHS Status | 1 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| 数据手册： |
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