Packaging: | Reel |
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Qg - Gate Charge: | 51 nC |
Pd - Power Dissipation: | 2 W |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Vgs - Gate-Source Voltage: | +/- 20 V |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 9 ns |
Series: | RQ3E160TB |
Factory Pack Quantity: | 3000 |
Brand: | ROHM Semiconductor |
RoHS: | Details |
Id - Continuous Drain Current: | 16 A |
Rise Time: | 30 ns |
Maximum Operating Temperature: | + 150 C |
Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 16A, 10V |
Supplier Device Package | 8-HSMT (3.2x3) |
Power Dissipation (Max) | 2W (Ta) |
Packaging | Tape & Reel (TR) |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
RoHS | Lead free / RoHS Compliant |
Rds On - Drain-Source Resistance: | 3.5 mOhms |
Minimum Operating Temperature: | - 55 C |
Package / Case: | HSMT-8 |
Configuration: | 1 N-Channel |
Mounting Style: | SMD/SMT |
Fall Time: | 45 ns |
Manufacturer: | ROHM Semiconductor |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 80 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Transistor Type: | 1 N-Channel |
Operating Temperature | 150°C (TJ) |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 2550pF @ 15V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Drain to Source Voltage (Vdss) | 30V |
Package / Case | 8-PowerVDFN |
Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
Lead Free Status / RoHS Status | 1 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
数据手册: |
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