RQ3E120ATTB
  • 量产中
  • 8-HSMT (3.2x3)
  • EAR99
产品描述:
RQ3E120AT Series -30 V -39 A 8 mOhm Surface Mount Power Mosfet - HSMT-8
标准包装:3000
数据手册: --
ECAD模型:
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  • 产品特性
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FET Feature Standard
Package / Case 8-PowerVDFN
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Part Status Active
Manufacturer Rohm Semiconductor
Family Transistors - FETs, MOSFETs - Single
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 3200pF @ 15V
ECCN EAR99
Rds On (Max) @ Id, Vgs 8 mOhm @ 12A, 10V
Power - Max 2W
Supplier Device Package 8-HSMT (3.2x3)
Gate Charge (Qg) @ Vgs 62nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id 2.5V @ 1mA
Operating Temperature 150°C (TJ)
Packaging Tape & Reel (TR)
RoHS Lead free / RoHS Compliant
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