R6007KNX
  • 1 (Unlimited)
  • 量产中
  • TO-220FM
产品描述:
MOSFET N-CH 600V 7A TO220FM
标准包装:500
数据手册:
ECAD模型:
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
Operating Temperature -55°C ~ 150°C (TJ)
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 620 mOhm @ 2.4A, 10V
Supplier Device Package TO-220FM
Power Dissipation (Max) 46W (Tc)
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Lead Free Status / RoHS Status 1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Feature Schottky Diode (Isolated)
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Drain to Source Voltage (Vdss) 600V
Packaging Bulk
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
RoHS Lead free / RoHS Compliant
数据手册:
登录之后就可发表评论