| HP8KA1TB | ||
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| 产品描述：
MOSFET 2N-CH 30V 14A HSOP8
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| 标准包装：2500 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
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| Product: | MOSFET |
|---|---|
| Packaging: | Reel |
| Qg - Gate Charge: | 24 nC, 24 nC |
| Pd - Power Dissipation: | 3 W |
| Package / Case: | HSOP-8 |
| Height: | 1.1 mm |
| Vgs - Gate-Source Voltage: | +/- 20 V, +/- 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 40 ns, 40 ns |
| Length: | 5.8 mm |
| Manufacturer: | ROHM Semiconductor |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 85 ns, 85 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V, 30 V |
| Type: | Power Mosfet |
| Maximum Operating Temperature: | + 150 C |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 2550pF @ 15V |
| Vgs(th) (Max) @ Id | 2.5V @ 10mA |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 3W |
| Lead Free Status / RoHS Status | 1 |
| RoHS | Lead free / RoHS Compliant |
| Width: | 5 mm |
| Rds On - Drain-Source Resistance: | 7 mOhms, 7 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 1 V, 1 V |
| Configuration: | 2 N-Channel |
| Unit Weight: | 0.002490 oz |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 25 ns, 25 ns |
| Forward Transconductance - Min: | 14 S, 14 S |
| Series: | HP8KA1 |
| Factory Pack Quantity: | 2500 |
| Brand: | ROHM Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 14 A, 14 A |
| Rise Time: | 30 ns, 30 ns |
| Transistor Type: | 2 N-Channel |
| Operating Temperature | 150°C (TJ) |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 5 mOhm @ 14A, 10V |
| Supplier Device Package | 8-HSOP |
| Package / Case | 8-PowerTDFN |
| Current - Continuous Drain (Id) @ 25°C | 14A |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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