HP8KA1TB
HP8KA1TB
  • 1 (Unlimited)
  • ACTIVE
  • 8-PowerTDFN
Product description : http://www.ameya360.com/product/6666085
SPQ:2500
Datasheet :
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Product: MOSFET
Packaging: Reel
Qg - Gate Charge: 24 nC, 24 nC
Pd - Power Dissipation: 3 W
Package / Case: HSOP-8
Height: 1.1 mm
Vgs - Gate-Source Voltage: +/- 20 V, +/- 20 V
Mounting Style: SMD/SMT
Fall Time: 40 ns, 40 ns
Length: 5.8 mm
Manufacturer: ROHM Semiconductor
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 85 ns, 85 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 30 V, 30 V
Type: Power Mosfet
Maximum Operating Temperature: + 150 C
FET Feature Logic Level Gate
FET Type 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 2550pF @ 15V
Vgs(th) (Max) @ Id 2.5V @ 10mA
Drain to Source Voltage (Vdss) 30V
Power - Max 3W
Lead Free Status / RoHS Status 1
RoHS Lead free / RoHS Compliant
Width: 5 mm
Rds On - Drain-Source Resistance: 7 mOhms, 7 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 1 V, 1 V
Configuration: 2 N-Channel
Unit Weight: 0.002490 oz
Number of Channels: 2 Channel
Typical Turn-On Delay Time: 25 ns, 25 ns
Forward Transconductance - Min: 14 S, 14 S
Series: HP8KA1
Factory Pack Quantity: 2500
Brand: ROHM Semiconductor
RoHS:  Details
Id - Continuous Drain Current: 14 A, 14 A
Rise Time: 30 ns, 30 ns
Transistor Type: 2 N-Channel
Operating Temperature 150°C (TJ)
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5 mOhm @ 14A, 10V
Supplier Device Package 8-HSOP
Package / Case 8-PowerTDFN
Current - Continuous Drain (Id) @ 25°C 14A
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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