| VEC2616-TL-W | ||
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| 产品描述：
60V,3A,-60V,-2.5A,N/P-Ch Power MOSFET
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| 标准包装：3000 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| Packaging: | Reel |
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| Qg - Gate Charge: | 10 nC, 11 nC |
| Pd - Power Dissipation: | 900 mW |
| Package / Case: | SOT-28-8 |
| Configuration: | 1 N-Channel, 1 P-Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 22 ns, 36 ns |
| Forward Transconductance - Min: | 2.6 S, 3.9 S |
| Transistor Polarity: | N-Channel, P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 41 ns, 65 ns |
| Id - Continuous Drain Current: | 3 A, - 2.5 A |
| Rise Time: | 7.5 ns, 9.8 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 116 mOhms, 194 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V, - 2.6 V |
| Vgs - Gate-Source Voltage: | +/- 20 V, +/- 20 V |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 7.3 ns, 6.4 ns |
| Manufacturer: | ON Semiconductor |
| Factory Pack Quantity: | 3000 |
| Brand: | ON Semiconductor |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 60 V, - 60 V |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| ECCN | EAR99 |
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