| Width: | 10.4 mm |
|---|---|
| Rds On - Drain-Source Resistance: | 375 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Vgs - Gate-Source Voltage: | +/- 30 V |
| Mounting Style: | Through Hole |
| Fall Time: | 10 ns |
| Length: | 16.4 mm |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 44 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Packaging: | Tube |
| Qg - Gate Charge: | 32 nC |
| Pd - Power Dissipation: | 35 W |
| Package / Case: | TO-220FP-3 |
| Height: | 4.6 mm |
| Unit Weight: | 0.081130 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 19 ns |
| Manufacturer: | STMicroelectronics |
| Factory Pack Quantity: | 50 |
| Brand: | STMicroelectronics |
| RoHS: | Details |
| Id - Continuous Drain Current: | 14 A |
| Rise Time: | 17.6 ns |
| Maximum Operating Temperature: | + 150 C |
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