| HN1B04FU-GR,LF | ||
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| Product description : Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A | ||
| SPQ：5 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
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| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Transistor Type | NPN, PNP |
| Current - Collector (Ic) (Max) | 150mA |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Mounting Type | Surface Mount |
| Operating Temperature | 125°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Frequency - Transition | 150MHz |
| Power - Max | 200mW |
| Supplier Device Package | US6 |
| Part Status | Active |
| Manufacturer | Toshiba Semiconductor and Storage |
| Family | Transistors - Bipolar (BJT) - Arrays |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
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