HN1B04FU-GR,LF
  • 量产中
  • US6
产品描述:
Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
标准包装:5
数据手册: --
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 150mA
Category Discrete Semiconductor Products
Voltage - Collector Emitter Breakdown (Max) 50V
Mounting Type Surface Mount
Operating Temperature 125°C (TJ)
Packaging Tape & Reel (TR)
Frequency - Transition 150MHz
Power - Max 200mW
Supplier Device Package US6
Part Status Active
Manufacturer Toshiba Semiconductor and Storage
Family Transistors - Bipolar (BJT) - Arrays
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
登录之后就可发表评论

请输入下方图片中的验证码:

验证码