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| 产品描述：
Transistor: N-MOSFET; unipolar; 30V; 5A; 2.3W; WSON6; 2x2mm
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| 标准包装：250 | ||
| 数据手册： -- | ||
| ECAD模型:
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- 规格参数
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| FET Feature | Logic Level Gate, 5V Drive |
|---|---|
| Package / Case | 6-WDFN Exposed Pad |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Part Status | Active |
| Manufacturer | Texas Instruments |
| Series | NexFET™ |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 32.4 mOhm @ 4A, 10V |
| Power - Max | 2.3W |
| Supplier Device Package | 6-WSON (2x2) |
| Gate Charge (Qg) @ Vgs | 6nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | 2 N-Channel (Dual) |
| Family | Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 353pF @ 15V |
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