NZT660
NZT660
  • ACTIVE
Product description : PNP LOW SAT BJT
SPQ:1
Datasheet :
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Collector- Base Voltage VCBO: 80 V
Collector-Emitter Saturation Voltage: 550 mV
Minimum Operating Temperature: - 55 C
Package / Case: SOT-223
Gain Bandwidth Product fT: 75 MHz
Unit Weight: 0.006632 oz
Emitter- Base Voltage VEBO: 5 V
DC Current Gain hFE Max: 300
Length: 6.5 mm
Manufacturer: Fairchild Semiconductor
Factory Pack Quantity: 4000
Part # Aliases: NZT660_NL
Product Category: Bipolar Transistors - BJT
Maximum Operating Temperature: + 150 C
Width: 3.56 mm
Packaging: Reel
Pd - Power Dissipation: 2 W
Height: 1.6 mm
Configuration: Single
Mounting Style: SMD/SMT
Maximum DC Collector Current: 3 A
Continuous Collector Current: 3 A
DC Collector/Base Gain hfe Min: 100
Transistor Polarity: PNP
Brand: Fairchild Semiconductor
RoHS:  Details
Collector- Emitter Voltage VCEO Max: 60 V
Datasheet:
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Supplier Code:SP1034

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Supplier Code:SP1034

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