| 2N7002H6327XTSA2 | ||
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| 产品描述：
Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| Width: | 1.3 mm |
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| Rds On - Drain-Source Resistance: | 1.6 Ohms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Configuration: | 1 N-Channel |
| Unit Weight: | 0.050717 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 3 ns |
| Forward Transconductance - Min: | 200 mS |
| Series: | 2N7002 |
| Factory Pack Quantity: | 3000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 5.5 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Transistor Type: | 1 N-Channel |
| Packaging: | Reel |
| Qg - Gate Charge: | 0.6 nC |
| Pd - Power Dissipation: | 500 mW |
| Package / Case: | SOT-23-3 |
| Height: | 1.1 mm |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 3.1 ns |
| Length: | 2.9 mm |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | 2N7002 2N7002H6327XT H6327 SP000929182 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 300 mA |
| Rise Time: | 3.3 ns |
| Maximum Operating Temperature: | + 150 C |
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