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| 产品描述：
N-Channel 55 V 14.7 mOhm 110 nC OptiMOS® Power-Transistor - PG-TO252-3-11
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| 数据手册： -- |
- 规格参数
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 14.7 mOhm @ 30A, 10V |
| Power - Max | 136W |
| Supplier Device Package | PG-TO252-3-11 |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 1485pF @ 25V |
| ECCN | EAR99 |
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