| NVD5117PLT4G | ||
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| 产品描述：
Power MOSFET -60 V, 16 mΩ, -61 A, Single P-Channel
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| 标准包装：1 | ||
| 数据手册： |
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| Qg - Gate Charge: | 85 nC |
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| Packaging: | Reel |
| Pd - Power Dissipation: | 118 W |
| Package / Case: | TO-252-3 |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 132 ns |
| Manufacturer: | ON Semiconductor |
| Transistor Polarity: | P-Channel |
| Brand: | ON Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 61 A |
| Rise Time: | 195 ns |
| Maximum Operating Temperature: | + 175 C |
| Rds On - Drain-Source Resistance: | 16 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Configuration: | Single |
| Unit Weight: | 0.139332 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 22 ns |
| Series: | NVD5117PL |
| Factory Pack Quantity: | 2500 |
| Typical Turn-Off Delay Time: | 50 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 60 V |
| Transistor Type: | 1 P-Channel |
| ECCN | EAR99 |
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