NVD5117PLT4G specifications -Ameya360 electronic components purchase network


NVD5117PLT4G

ACTIVE EAR99
Product description : Power MOSFET -60 V, 16 mΩ, -61 A, Single P-Channel
SPQ：1
Datasheet : NVD5117PLT4G.pdf

Qg - Gate Charge:	85 nC
Packaging:	Reel
Pd - Power Dissipation:	118 W
Package / Case:	TO-252-3
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	SMD/SMT
Fall Time:	132 ns
Manufacturer:	ON Semiconductor
Transistor Polarity:	P-Channel
Brand:	ON Semiconductor
RoHS:	Details
Id - Continuous Drain Current:	- 61 A
Rise Time:	195 ns
Maximum Operating Temperature:	+ 175 C
Rds On - Drain-Source Resistance:	16 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Configuration:	Single
Unit Weight:	0.139332 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	22 ns
Series:	NVD5117PL
Factory Pack Quantity:	2500
Typical Turn-Off Delay Time:	50 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 60 V
Transistor Type:	1 P-Channel
ECCN	EAR99

Datasheet： NVD5117PLT4G.pdf

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Stock code :	658410
Mfg name :	onsemi
MPN :	NVD5117PLT4G
Product description :	Power MOSFET -60 V, 16 mΩ, -61 A, Single P-Channel

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