BSM300D12P2E001
  • 1 (Unlimited)
  • ACTIVE
  • Module
Product description : Discrete Semiconductor Modules 300A SiC Power Module
SPQ：1
Datasheet :
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FET Type 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
FET 功能 标准
Mounting Type Surface Mount
Power - Max 1875W
Current - Continuous Drain (Id) @ 25°C 300A
Vgs(th) (Max) @ Id 4V @ 68mA
FET Feature Silicon Carbide (SiC)
FET Type 2 N-Channel (Half Bridge)
Mounting Type Chassis Mount
Supplier Device Package Module
Package / Case Module
Manufacturer Rohm Semiconductor
Part Status Active
Lead Free Status / RoHS Status 1
FET Feature Standard
FET 类型 2 个 N 通道（半桥）
Input Capacitance (Ciss) @ Vds 35000pF @ 10V
Operating Temperature -40°C ~ 150°C (TJ)
Package / Case Module
Supplier Device Package Module
Operating Temperature -40°C ~ 150°C (TJ)
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays
Input Capacitance (Ciss) (Max) @ Vds 35000pF @ 10V
Vgs(th) (Max) @ Id 4V @ 68mA
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Power - Max 1875W
Packaging Tray
Current - Continuous Drain (Id) @ 25°C 300A (Tc)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Datasheet：
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