BSM300D12P2E001
  • 1 (Unlimited)
  • ACTIVE
  • Module
Product description : MOSFET 2N-CH 1200V 300A
SPQ：1
Datasheet :
  • Specifications
  • Product Attributes
  • Documents
  • Product reviews

FET Type 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
FET 功能 标准
Mounting Type Surface Mount
Power - Max 1875W
Current - Continuous Drain (Id) @ 25°C 300A
Vgs(th) (Max) @ Id 4V @ 68mA
FET Feature Silicon Carbide (SiC)
FET Type 2 N-Channel (Half Bridge)
Mounting Type Chassis Mount
Supplier Device Package Module
Package / Case Module
Manufacturer Rohm Semiconductor
Part Status Active
Lead Free Status / RoHS Status 1
FET Feature Standard
FET 类型 2 个 N 通道（半桥）
Input Capacitance (Ciss) @ Vds 35000pF @ 10V
Operating Temperature -40°C ~ 150°C (TJ)
Package / Case Module
Supplier Device Package Module
Operating Temperature -40°C ~ 150°C (TJ)
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays
Input Capacitance (Ciss) (Max) @ Vds 35000pF @ 10V
Vgs(th) (Max) @ Id 4V @ 68mA
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Power - Max 1875W
Packaging Tray
Current - Continuous Drain (Id) @ 25°C 300A (Tc)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Datasheet：
You can comment after logging in.
  • Associated Product
SP8J3FU6TB
ROHM Semiconductor
MP6M14TCR
Rohm Semiconductor
SP8J1FU6TB
ROHM Semiconductor