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| 产品描述：
-20V,-5.6A,50mOhm Dual P-Ch Power MOSFET with ESD Protection
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| 标准包装：1 | ||
| 数据手册： |
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| Qg - Gate Charge: | 10.4 nC |
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| Packaging: | Reel |
| Pd - Power Dissipation: | 1.4 W |
| Package / Case: | UDFN-6 |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Fall Time: | 30 ns |
| Forward Transconductance - Min: | 16 S |
| Series: | NTLUD3A50PZ |
| Factory Pack Quantity: | 3000 |
| Typical Turn-Off Delay Time: | 39 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 20 V |
| Transistor Type: | 2 P-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 50 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 0.5 V |
| Vgs - Gate-Source Voltage: | 8 V |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 7 ns |
| Manufacturer: | ON Semiconductor |
| Transistor Polarity: | P-Channel |
| Brand: | ON Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 5.6 A |
| Rise Time: | 12 ns |
| Maximum Operating Temperature: | + 150 C |
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