NSVMUN5132T1G specifications -Ameya360 electronic components purchase network


NSVMUN5132T1G

ACTIVE SC-70-3 EAR99
Product description : NSVMUN5132T1G PNP 数字晶体管, 100 mA, Vce=50 V, 4.7 kΩ, 电阻比:1.0, 3针 SC-70封装
SPQ：3000
Datasheet : NSVMUN5132T1G.pdf

Resistor - Base (R1) (Ohms)	4.7k
Package / Case	SC-70, SOT-323
Transistor Type	PNP - Pre-Biased
Supplier Device Package	SC-70-3
Part Status	Active
Manufacturer	ON Semiconductor
Family	Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector Cutoff (Max)	500nA
Packaging	Tape & Reel (TR)
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Power - Max	202mW
Resistor - Emitter Base (R2) (Ohms)	4.7k
Current - Collector (Ic) (Max)	100mA
Category	Discrete Semiconductor Products
Voltage - Collector Emitter Breakdown (Max)	50V
Mounting Type	Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 5mA, 10V
ECCN	EAR99

Datasheet： NSVMUN5132T1G.pdf

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Stock code :	657809
Mfg name :	onsemi
MPN :	NSVMUN5132T1G
Product description :	NSVMUN5132T1G PNP 数字晶体管, 100 mA, Vce=50 V, 4.7 kΩ, 电阻比:1.0, 3针 SC-70封装

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