| IXTA1N170DHV | ||
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| 产品描述：
Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| Rds On - Drain-Source Resistance: | 16 Ohms |
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| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Configuration: | 1 N-Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 216 ns |
| Forward Transconductance - Min: | 570 mS |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Depletion |
| Typical Turn-Off Delay Time: | 130 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 1700 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Qg - Gate Charge: | 47 nC |
| Pd - Power Dissipation: | 290 W |
| Package / Case: | TO-263HV-2L |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 46 ns |
| Manufacturer: | IXYS |
| Factory Pack Quantity: | 50 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | 1 A |
| Rise Time: | 38 ns |
| Maximum Operating Temperature: | + 150 C |
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