SI8413DB-T1-E1 specifications -Ameya360 electronic components purchase network


SI8413DB-T1-E1

ACTIVE 4-Microfoot ECL99
Product description : MOSFET P-CH 20V 4.8A 2X2 4-MFP
SPQ：1
Datasheet : SI8413DB-T1-E1.pdf

Power - Max	1.47W
Rds On (Max) @ Id, Vgs	48 mOhm @ 1A, 4.5V
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.8A (Ta)
Part Status	Active
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Vgs(th) (Max) @ Id	1.4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
ECCN	ECL99
Package / Case	4-XFBGA, CSPBGA
FET Feature	Standard
Supplier Device Package	4-Microfoot
Gate Charge (Qg) @ Vgs	21nC @ 4.5V
Category	Discrete Semiconductor Products
FET Type	MOSFET P-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Packaging	Tape & Reel (TR)

Datasheet： SI8413DB-T1-E1.pdf

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