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| 产品描述：
VFBGA 63/I°/NAND FLASH MASS STORAGE 256MX8 29F2G08ABAEA ASYNCH/PAGE READ PB
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| Supplier Device Package | 63-VFBGA (9x11) |
|---|---|
| Voltage - Supply | 2.7 V ~ 3.6 V |
| Memory Size | 2G (256M x 8) |
| Part Status | Active |
| Manufacturer | Micron Technology Inc. |
| Operating Temperature | -40 °C~85 °C |
| Packaging | Tray |
| Data Retention Time-Min | 10 |
| Operating Mode | Asynchronous |
| Output Characteristics | 3-State |
| Standby Current-Max | 0.0001 A |
| Supply Voltage-Max (Vsup) | 3.6 V |
| Supply Voltage-Nom (Vsup) | 3.3 V |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Pitch | 0.8 Mm |
| Type | Slc Nand Type |
| Pin Count | 63 |
| Package / Case | 63-VFBGA |
| Memory Type | FLASH - NAND |
| Interface | Parallel |
| Category | Integrated Circuits (ICs) |
| Family | Memory |
| Format - Memory | FLASH |
| Access Time-Max | 25 Ns |
| Endurance | 100000 Write/Erase Cycles |
| Organization | 256mx8 |
| Programming Voltage | 3.3 V |
| Supply Current-Max | 0.035 Ma |
| Supply Voltage-Min (Vsup) | 2.7 V |
| Technology | Cmos |
| Terminal Form | Ball |
| Terminal Position | Bottom |
| Write Protection | Hardware |
| JESD-30 Code | R-PBGA-B63 |
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