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| 产品描述：
N-Channel 600 V 1..05 Ohm SMT MDmesh M2 Power Mosfet - PowerFLAT 5x5
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| 标准包装：1 | ||
| 数据手册： -- | ||
| ECAD模型:
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| Packaging: | Reel |
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| Qg - Gate Charge: | 8.8 nC |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Vgs - Gate-Source Voltage: | +/- 25 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 7.6 ns |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 19.3 ns |
| Product Category: | MOSFET |
| Rise Time: | 7.2 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 1.05 Ohms |
| Pd - Power Dissipation: | 67 W |
| Package / Case: | PowerFlat-10 |
| Configuration: | 1 N-Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 15.9 ns |
| Manufacturer: | STMicroelectronics |
| Factory Pack Quantity: | 3000 |
| Brand: | STMicroelectronics |
| RoHS: | Details |
| Id - Continuous Drain Current: | 5 A |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Maximum Operating Temperature: | + 150 C |
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