STB42N60M2-EP
  • 量产中
  • EAR99
产品描述:
N-Channel 600 V 87 mOhm 250 W SMT MDmesh™ M2 Mosfet - D²PAK
标准包装:1
数据手册: --
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
Packaging: Reel
Qg - Gate Charge: 55 nC
Pd - Power Dissipation: 250 W
Package / Case: TO-252-3
Configuration: Single
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 16.5 ns
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 96.5 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 600 V
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 87 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 2 V
Vgs - Gate-Source Voltage: +/- 25 V
Unit Weight: 0.139332 oz
Fall Time: 8 ns
Manufacturer: STMicroelectronics
Factory Pack Quantity: 1000
Brand: STMicroelectronics
RoHS:  Details
Id - Continuous Drain Current: 34 A
Rise Time: 9.5 ns
ECCN EAR99
登录之后就可发表评论

请输入下方图片中的验证码:

验证码